一、 A Commitment-based Management Strategy for the Performance and Reliability Enhancement of Flash-memory Storage Systems
1.idear
（1）A three-level address translation architecture with an adaptive block mapping mechanism is proposed
注：三级映射，就是
（2）Parallelism of operations over multiple chips is also explored with the considerations of the write constraints of multi-level-cell flash memory chips.
2.问题
（1）However,pages in MLC×nflash memory usually can only be written sequentially in a block,while pages in SLC flash memory can be written randomly within a block.
3.文章细节
（1）chip——》block set（图2）——》page set ( The size of a physical page set is the unit of data written to or read from the flash memory.)
（2）The physical pages of the last physical page set of each physical block set are referred to assummary pages, and other physical pages are referred to asdata pages.
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