1.仪器介绍
二次离子质谱（SIMS）是一种用于通过用聚焦的一次离子束溅射样品表面并收集和分析喷射的二次离子来分析固体表面和薄膜的组成的技术。SIMS是最灵敏的表面分析技术，元素检测限为百万分之几到十亿分之一。
Schematic of a typical dynamic SIMS instrument. High energy (usually several keV) ions are supplied by an ion gun (1 or 2) and focused on to the target sample (3), which ionizes and sputters some atoms off the surface (4). These secondary ions are then collected by ion lenses (5) and filtered according to atomic mass (6), then projected onto an electron multiplier (7, top), Faraday cup (7, bottom), or CCD screen (8)
2.工作原理
对，原理就这么简单。
3.应用
#掺杂和杂质深度剖析；
#薄膜（金属，电介质，SiGe，III-V和II-VI材料）的成分和杂质测量；
#浅埋植入物和超薄膜（ULE植入物和栅极氧化物）的超高深度分辨率分析；
#散装分析包括Si中的B，C，O和N；
#离子注入机等加工工具的高精度匹配。
平常用到的大概就只有前三种。
4.分析方法
Measure the thickness of a-IGZO and analysis the density of Hydrogen-diffusion
分析IGZO有源层里的H离子杂质
To compare the existence of ions in the 350℃ and 500℃ annealed Al2O3 film.
杂质分析+1
TOF-SIMS depth profiles of the IZO thin films in order to study the interface of IZO and SiO2 in different temperture.
扩散分析
参考文献
[1]Tari A, Wong W S. Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors[J]. Applied Physics Letters, 2018, 112.
[2]Park J H, Kim K, Yoo Y B, et al. Water adsorption effects of nitrate ion coordinated Al2O3 dielectric for high performance metal-oxide thin-film transistor[J]. Journal of Materials Chemistry C, 2013, 1(43):7166-7174.
[3]Bang J, Matsuishi S, Hosono H. Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications[J]. Applied Physics Letters, 2017, 110(23):1012.